Switching Behaviors of TiN/HfOx/Pt Based RRAM
نویسندگان
چکیده
Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief. Keywords—HfOx, resistive switching, RRAM.
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تاریخ انتشار 2013